SiCrystal, STMicroelectronics Expand Silicon Carbide Wafer Supply Agreement

ROHM and STMicroelectronics announced the expansion of the existing multi-year, long-term 150mm silicon carbide (SiC) substrate wafers supply agreement with SiCrystal, a ROHM group company. The new multi-year agreement governs the supply of larger volumes of SiC substrate wafers manufactured in Nuremberg, Germany, for a minimum expected value of $230 million.

“This expanded agreement with SiCrystal will bring additional volumes of 150mm SiC substrate wafers to support our devices manufacturing capacity ramp-up for automotive and industrial customers worldwide,” said Geoff West, EVP and chief procurement officer, STMicroelectronics. “It helps strengthen our supply chain resilience for future growth, with a balanced mix of in-house and commercial supply across regions.”

Energy-efficient SiC power semiconductors enable electrification in the automotive and industrial sectors in a more sustainable way.